TPW2R508NH,L1Q
PB-F POWER MOSFET TRANSISTOR DOSManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Toshiba Semiconductor and Storage TPW2R508NH-L1Q is an N-Channel Power MOSFET from the U-MOSVIII-H series. This device features a Drain-Source Voltage (Vdss) of 75V and a continuous drain current (Id) of 150A at 25°C. With a maximum On-Resistance (Rds On) of 2.5mOhm at 50A and 10V gate drive, it offers low conduction losses. The component is housed in an 8-DSOP Advance package, suitable for surface mounting. Key parameters include a maximum gate charge (Qg) of 72 nC at 10V and an input capacitance (Ciss) of 6000 pF at 37.5V. Power dissipation is rated at 800mW (Ta) and 142W (Tc), with an operating temperature range up to 150°C. This MOSFET is commonly utilized in industrial power supplies, automotive applications, and high-power switching circuits.
Additional Information
Series: U-MOSVIII-HRoHS Status: unknownManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 142W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-DSOP Advance |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 37.5 V |
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