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TPW1500CNH,L1Q

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TPW1500CNH,L1Q

PB-F POWER MOSFET TRANSISTOR DSO

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage N-Channel Power MOSFET, part number TPW1500CNH-L1Q, from the U-MOSVIII-H series. This component features a Drain-Source Voltage (Vdss) of 150 V and a continuous drain current (Id) of 38 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 15.4 mOhm at 19 A and 10 V, with a gate charge (Qg) of 22 nC at 10 V. Input capacitance (Ciss) is rated at 2200 pF at 75 V. Maximum power dissipation is 800 mW (Ta) and 142 W (Tc). This surface mount device is supplied in an 8-DSOP Advance package, on tape and reel. The TPW1500CNH-L1Q is suitable for applications in automotive and industrial sectors requiring efficient power switching.

Additional Information

Series: U-MOSVIII-HRoHS Status: unknownManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Rds On (Max) @ Id, Vgs15.4mOhm @ 19A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device Package8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 75 V

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