TPN2R503NC,L1Q
MOSFET N CH 30V 40A 8TSON-ADVManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPN2R503NC-L1Q is an N-channel power MOSFET from the U-MOSVIII series. This device offers a 30V drain-source breakdown voltage and a continuous drain current capability of 40A at 25°C ambient temperature. Its low on-resistance is specified at 2.5mOhm maximum at 20A drain current and 10V gate-source voltage. The MOSFET features a 4.5V to 10V gate drive voltage range and a maximum gate charge of 40 nC at 10V. Input capacitance (Ciss) is 2230pF maximum at 15V drain-source voltage. The component is housed in an 8-TSON Advance package with dimensions of 3.1x3.1 mm and is supplied on tape and reel. Maximum power dissipation is 700mW (Ta) or 35W (Tc). This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: U-MOSVIIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 35W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 500µA |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2230 pF @ 15 V |
Request a Quote
Clients Also Buy
XPN3R804NC,L1XHQ
MOSFET N-CH 40V 40A 8TSON
TPN6R303NC,LQ
MOSFET N CH 30V 20A 8TSON-ADV
TPN4R203NC,L1Q
MOSFET N CH 30V 23A 8TSON-ADV
