TPN1600ANH,L1Q
MOSFET N CH 100V 17A 8TSON-ADVManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 100 V 17A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Additional Information
Series: U-MOSVIII-HRoHS Status: RoHS CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 50 V |
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