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TPH4R606NH,L1Q

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TPH4R606NH,L1Q

MOSFET N-CH 60V 32A 8SOP

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 60 V 32A (Ta) 1.6W (Ta), 63W (Tc) Surface Mount 8-SOP Advance (5x5)

Additional Information

Series: U-MOSVIII-HRoHS Status: RoHS CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C32A (Ta)
Rds On (Max) @ Id, Vgs4.6mOhm @ 16A, 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id4V @ 500µA
Supplier Device Package8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On)6.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3965 pF @ 30 V

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