TPH2R903PL,L1Q
PB-FPOWERMOSFETTRANSISTORSOP8-ADManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage U-MOSIX-H series N-Channel Power MOSFET, part number TPH2R903PL-L1Q, is designed for high-efficiency power management applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current of 70A at 25°C (Tc). With a low on-resistance of 2.9mOhm at 35A and 10V (Vgs), it minimizes conduction losses. The TPH2R903PL-L1Q operates with a gate drive voltage range of 4.5V to 10V and exhibits a maximum gate charge (Qg) of 26 nC at 10V. Its high thermal performance is evidenced by a maximum power dissipation of 81W (Tc) and an operating temperature up to 175°C. Packaged in an 8-SOP Advance (5x5) surface mount configuration and supplied on tape and reel, this MOSFET is suitable for use in automotive and industrial power conversion systems.
Additional Information
Series: U-MOSIX-HRoHS Status: unknownManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 960mW (Ta), 81W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 200µA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 15 V |
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