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TPH1R712MD,L1Q

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TPH1R712MD,L1Q

MOSFET P-CH 20V 60A 8SOP

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

P-Channel 20 V 60A (Tc) 78W (Tc) Surface Mount 8-SOP Advance (5x5)

Additional Information

Series: U-MOSVIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs1.7mOhm @ 30A, 4.5V
FET Feature-
Power Dissipation (Max)78W (Tc)
Vgs(th) (Max) @ Id1.2V @ 1mA
Supplier Device Package8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds10900 pF @ 10 V

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