TPCP8103-H(TE85LFM
MOSFET P-CH 40V 4.8A PS-8Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCP8103-H-TE85LFM is a P-channel MOSFET from the U-MOSIII-H series. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 4.8A at 25°C ambient temperature. It offers a low ON-resistance of 40mOhm maximum at 2.4A and 10V Vgs. The device is packaged in a compact PS-8 (2.9x2.4) surface-mount package, supplied on tape and reel. Key parameters include a gate charge of 19 nC maximum at 10V Vgs and input capacitance of 800 pF maximum at 10V Vds. This MOSFET is suitable for applications requiring efficient power switching and is rated for operation up to a junction temperature of 150°C. Typical industries utilizing this component include automotive and industrial power management.
Additional Information
Series: U-MOSIII-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 840mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | PS-8 (2.9x2.4) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 10 V |
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