TPCP8005-H(TE85L,F
MOSFET N-CH 30V 11A PS-8Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPCP8005-H-TE85L-F is an N-Channel MOSFET from the U-MOSV-H series. This component features a 30V drain-source voltage and a continuous drain current of 11A at 25°C. Optimized for power efficiency, it exhibits a low on-resistance of 12.9mOhm maximum at 5.5A and 10V Vgs. The device is specified with a gate charge of 20 nC maximum at 10V Vgs and an input capacitance of 2150 pF maximum at 10V Vds. With a maximum power dissipation of 840mW at 25°C (Ta), it is housed in a compact PS-8 (2.9x2.4) surface-mount package, supplied on tape and reel. This MOSFET is suitable for applications requiring efficient power switching in areas such as automotive and industrial power management. The operating junction temperature range is up to 150°C.
Additional Information
Series: U-MOSV-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 12.9mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 840mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | PS-8 (2.9x2.4) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 10 V |
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