TPCP8003-H(TE85L,F
MOSFET N-CH 100V 2.2A PS-8Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCP8003-H-TE85L-F is an N-channel MOSFET from the U-MOSIII-H series. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.2A at 25°C. The device offers a maximum on-resistance (Rds On) of 180mOhm at 1.1A and 10V gate-source voltage. With a gate charge (Qg) of 7.5 nC maximum at 10V and input capacitance (Ciss) of 360 pF maximum at 10V, it is suitable for various power management applications. The TPCP8003-H-TE85L-F is housed in a PS-8 (2.9x2.4) surface mount package, enabling efficient board space utilization. Its maximum power dissipation is 840mW (Ta), and it operates at junction temperatures up to 150°C. This MOSFET is commonly utilized in consumer electronics and industrial automation. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: U-MOSIII-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 840mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | PS-8 (2.9x2.4) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 10 V |
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