TPCP8001-H(TE85LFM
MOSFET N-CH 30V 7.2A PS-8Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel MOSFET, U-MOSIII series, TPCP8001-H-TE85LFM. This device features a 30V drain-source voltage and a continuous drain current of 7.2A at 25°C ambient. The Rds(on) is specified at a maximum of 16mOhm at 3.6A and 10V Vgs. Input capacitance (Ciss) is 640pF maximum at 10V Vds, with a gate charge (Qg) of 11 nC maximum at 10V Vgs. The MOSFET is housed in an 8-SMD, Flat Leads package, specifically the PS-8 (2.9x2.4) enclosure, suitable for surface mounting. It offers a maximum operating junction temperature of 150°C and a power dissipation of 1W (ambient) or 30W (case). This component is widely utilized in power management applications across automotive and industrial sectors.
Additional Information
Series: U-MOSIIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | PS-8 (2.9x2.4) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 10 V |
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