TPCF8B01(TE85L,F,M
MOSFET P-CH 20V 2.7A VS-8Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPCF8B01-TE85L-F-M is a P-Channel MOSFET from the U-MOSIII series. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 2.7A at 25°C. The device offers a maximum on-resistance (Rds On) of 110mOhm at 1.4A and 4.5V Vgs. It is packaged in a VS-8 (2.9x1.5) surface mount configuration, supplied on tape and reel. Key parameters include a gate charge (Qg) of 6nC (max) at 5V and input capacitance (Ciss) of 470pF (max) at 10V. The TPCF8B01-TE85L-F-M includes an isolated Schottky diode and operates at temperatures up to 150°C. This device is suitable for applications in power management and consumer electronics.
Additional Information
Series: U-MOSIIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 1.4A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 330mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Supplier Device Package | VS-8 (2.9x1.5) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 10 V |
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