TPCF8A01(TE85L)
MOSFET N-CH 20V 3A VS-8Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPCF8A01-TE85L- is an N-Channel Power MOSFET from the U-MOSIII series. This device features a 20V drain-source voltage and a continuous drain current of 3A at 25°C. The TPCF8A01-TE85L- offers a low on-resistance of 49mOhm at 1.5A and 4.5V Vgs. It includes an integrated Schottky diode for enhanced performance and is rated for a maximum power dissipation of 330mW (Ta). The MOSFET is supplied in a VS-8 (2.9x1.5) 8-SMD, Flat Leads package, suitable for surface mounting and delivered on tape and reel. Key parameters include a gate charge of 7.5nC at 5V and input capacitance of 590pF at 10V. This component is utilized in applications such as power management and general-purpose switching for consumer electronics and industrial systems.
Additional Information
Series: U-MOSIIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 1.5A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 330mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Supplier Device Package | VS-8 (2.9x1.5) |
| Drive Voltage (Max Rds On, Min Rds On) | 2V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 10 V |
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