TPCF8102(TE85L,F,M
MOSFET P-CH 20V 6A VS-8Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage P-Channel MOSFET, TPCF8102-TE85L-F-M, from the U-MOSIII series. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 6A at 25°C. The TPCF8102-TE85L-F-M offers a low on-resistance of 30mOhm maximum at 3A and 4.5V Vgs. Gate charge is specified at a maximum of 19nC at 5V Vgs, with input capacitance (Ciss) reaching 1550pF maximum at 10V Vds.
Designed for surface mounting, this component utilizes the VS-8 (2.9x1.5) package, delivered in Tape & Reel (TR). It operates within a temperature range of -55°C to 150°C (TJ), with a maximum power dissipation of 700mW (Ta). Drive voltages for achieving optimal on-resistance are 1.8V and 4.5V. The TPCF8102-TE85L-F-M is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: U-MOSIIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Supplier Device Package | VS-8 (2.9x1.5) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 10 V |
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