TPCC8A01-H(TE12LQM
MOSFET N-CH 30V 21A 8TSONManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCC8A01-H-TE12LQM is an N-Channel MOSFET from the U-MOSV-H series. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 21A at 25°C (Ta). With a maximum Rds(on) of 9.9mOhm at 10.5A and 10V Vgs, it offers low conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V and a gate threshold voltage (Vgs(th)) of 2.3V at 1mA. Key capacitances include an input capacitance (Ciss) of 1900pF at 10V. Power dissipation is rated at 700mW (Ta) and 30W (Tc). The component is housed in an 8-TSON Advance (3.3x3.3) package, suitable for surface mounting. This MOSFET is utilized in power management applications across automotive and industrial sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: U-MOSV-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.9mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 10 V |
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