TPCC8093,L1Q
MOSFET N-CH 20V 21A 8TSONManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage U-MOSVII series N-channel MOSFET, part number TPCC8093-L1Q. This 20V device features a low on-resistance of 5.8mOhm at 10.5A and 4.5V gate drive. With a continuous drain current of 21A at 25°C (Ta) and a maximum power dissipation of 1.9W (Ta) or 30W (Tc), it is suitable for demanding applications. The TPCC8093-L1Q offers a gate charge of 16nC at 5V and input capacitance of 1860pF at 10V. Packaged in an 8-TSON Advance (3.1x3.1) for surface mounting, this component is utilized in automotive and industrial power management systems. It operates within a temperature range of -40°C to 150°C and supports gate-source voltages up to ±12V.
Additional Information
Series: U-MOSVIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 10.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 1.2V @ 500µA |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1860 pF @ 10 V |
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