TPCC8067-H,LQ(S
MOSFET N-CH 30V 9A 8TSONManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage U-MOSVII-H series N-Channel MOSFET, part number TPCC8067-H-LQ-S. This component features a 30V drain-source voltage and a continuous drain current of 9A at 25°C (Ta). The device offers a low on-resistance of 25mOhm maximum at 4.5A and 10V. It is packaged in an 8-TSON Advance (3.1x3.1) surface mount configuration, supplied on tape and reel. Key electrical parameters include a gate charge of 9.5 nC maximum at 10V and input capacitance of 690 pF maximum at 10V. Maximum power dissipation is 700mW (Ta) or 15W (Tc) at an operating temperature of 150°C (TJ). This MOSFET is suitable for applications requiring efficient power switching.
Additional Information
Series: U-MOSVII-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 15W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 10 V |