TPCC8066-H,LQ(S
MOSFET N-CH 30V 11A 8TSONManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCC8066-H-LQ-S is a high-performance N-Channel MOSFET from the U-MOSVII-H series. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 11A at 25°C (Ta). The TPCC8066-H-LQ-S offers a low on-resistance of 15mOhm maximum at 5.5A and 10V Vgs, optimized for efficient power switching. It is housed in an 8-TSON Advance (3.1x3.1) surface mount package, designed for demanding applications. Key electrical parameters include a gate charge of 15 nC maximum and input capacitance of 1100 pF maximum. The device supports a wide gate drive voltage range from 4.5V to 10V and has a maximum junction temperature of 150°C. Power dissipation is rated at 700mW (Ta) and 17W (Tc). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: U-MOSVII-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 17W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 10 V |