TPCC8008(TE12L,QM)
MOSFET N-CH 30V 25A 8TSONManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPCC8008-TE12L-QM- is an N-Channel MOSFET from the U-MOSIV series. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 25A at 25°C. The surface mount 8-TSON Advance package (3.3x3.3mm) offers low on-resistance, with a maximum of 6.8mOhm at 12.5A and 10V Vgs. It exhibits a gate charge (Qg) of 30 nC maximum at 10V Vgs and an input capacitance (Ciss) of 1600 pF maximum at 10V Vds. Power dissipation is rated at 700mW (Ta) and 30W (Tc), with an operating junction temperature of 150°C. This device is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: U-MOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1A |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 10 V |
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