TPCC8006-H(TE12LQM
MOSFET N-CH 30V 22A 8TSONManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage U-MOSVI-H series N-Channel MOSFET, part number TPCC8006-H-TE12LQM. This 30V device features a low Rds(on) of 8mOhm at 11A and 10V Vgs, facilitating efficient power switching. With a continuous drain current capability of 22A (Ta) and a maximum power dissipation of 27W (Tc), it is well-suited for demanding applications. Key electrical parameters include a gate charge of 27 nC (max) and input capacitance of 2200 pF (max). The component is housed in a compact 8-TSON Advance (3.3x3.3) surface-mount package, supplied on tape and reel. This MOSFET is utilized in automotive and industrial power management systems.
Additional Information
Series: U-MOSVI-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 27W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 200µA |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 10 V |
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