TPCC8005-H(TE12LQM
MOSFET N-CH 30V 26A 8TSONManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage U-MOSVI-H series N-Channel MOSFET, part number TPCC8005-H-TE12LQM. This 30V device features a low on-resistance of 6.4mOhm at 13A and 10V Vgs. With a continuous drain current rating of 26A (Ta) and maximum power dissipation of 700mW (Ta) or 30W (Tc), it is suitable for demanding applications. Key parameters include a gate charge of 35 nC at 10V and input capacitance of 2900 pF at 10V. The MOSFET is housed in an 8-TSON Advance (3.3x3.3) package, surface mountable via tape and reel. It is designed for operation up to 150°C (TJ) and finds use in automotive and industrial power management systems.
Additional Information
Series: U-MOSVI-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 500µA |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 10 V |
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