TPCC8003-H(TE12LQM
MOSFET N-CH 30V 13A 8TSONManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage's TPCC8003-H-TE12LQM is a N-Channel MOSFET from the U-MOSVI-H series. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 13A at 25°C (Ta). The low on-resistance is specified at 16.9mOhm maximum at 6.5A and 10V Vgs. It offers a maximum gate charge of 17 nC at 10V Vgs and input capacitance (Ciss) of 1300 pF at 10V Vds. With a maximum junction temperature of 150°C, it dissipates 700mW from the board (Ta) and 22W from the case (Tc). The component is housed in an 8-TSON Advance (3.3x3.3) package with exposed pad and is supplied on tape and reel. This MOSFET is suitable for applications in automotive and industrial power switching.
Additional Information
Series: U-MOSVI-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 16.9mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 22W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 200µA |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 10 V |
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