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TPCC8003-H(TE12LQM

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TPCC8003-H(TE12LQM

MOSFET N-CH 30V 13A 8TSON

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage's TPCC8003-H-TE12LQM is a N-Channel MOSFET from the U-MOSVI-H series. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 13A at 25°C (Ta). The low on-resistance is specified at 16.9mOhm maximum at 6.5A and 10V Vgs. It offers a maximum gate charge of 17 nC at 10V Vgs and input capacitance (Ciss) of 1300 pF at 10V Vds. With a maximum junction temperature of 150°C, it dissipates 700mW from the board (Ta) and 22W from the case (Tc). The component is housed in an 8-TSON Advance (3.3x3.3) package with exposed pad and is supplied on tape and reel. This MOSFET is suitable for applications in automotive and industrial power switching.

Additional Information

Series: U-MOSVI-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-VDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Ta)
Rds On (Max) @ Id, Vgs16.9mOhm @ 6.5A, 10V
FET Feature-
Power Dissipation (Max)700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id2.3V @ 200µA
Supplier Device Package8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 10 V

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