TPCC8002-H(TE12L,Q
MOSFET N-CH 30V 22A 8TSONManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage's TPCC8002-H-TE12L-Q is an N-Channel MOSFET from the U-MOSV-H series. This device features a 30V drain-source voltage and a continuous drain current capability of 22A at 25°C (Ta). With a maximum on-resistance of 8.3mOhm at 11A and 10V, it offers efficient power handling. The MOSFET is housed in an 8-TSON Advance (3.3x3.3) package, suitable for surface mounting. Key parameters include a gate charge of 27 nC (max) at 10V and input capacitance of 2500 pF (max) at 10V. Power dissipation is rated at 700mW (Ta) and 30W (Tc). Operating temperature reaches up to 150°C (TJ). This component finds application in power management, automotive, and industrial sectors.
Additional Information
Series: U-MOSV-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 10 V |
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