TPCA8A04-H(TE12L,Q
MOSFET N-CH 30V 44A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPCA8A04-H-TE12L-Q is an N-Channel MOSFET from the U-MOSV-H series. This device features a 30V drain-source voltage and a continuous drain current of 44A at 25°C. Designed for surface mounting, it is supplied in an 8-SOP Advance (5x5) package on tape and reel. Key electrical characteristics include a maximum Rds(On) of 3.2mOhm at 22A and 10V, with gate drive voltages specified from 4.5V to 10V. The input capacitance (Ciss) is 5700pF (max) at 10V, and gate charge (Qg) is 59nC (max) at 10V. This component is suitable for applications requiring high current handling and low on-resistance, finding use in power management and automotive systems. It operates at a junction temperature up to 150°C.
Additional Information
Series: U-MOSV-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 10 V |
Request a Quote
Clients Also Buy
TPCC8A01-H(TE12LQM
MOSFET N-CH 30V 21A 8TSON
TPCC8002-H(TE12L,Q
MOSFET N-CH 30V 22A 8TSON
TPC8038-H(TE12L,Q)
MOSFET N-CH 30V 12A 8SOP
