TPCA8A02-H(TE12LQM
MOSFET N-CH 30V 34A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel MOSFET, part number TPCA8A02-H-TE12LQM, is a high-performance component from the U-MOSV-H series. This 30V device features a continuous drain current capability of 34A (Ta) and a low on-resistance of 5.3mOhm at 17A, 10V. Designed for surface mount applications, it is supplied in an 8-SOP Advance (5x5) package, delivered on tape and reel. The MOSFET exhibits a gate charge of 36nC (Max) at 10V and input capacitance of 3430pF (Max) at 10V. Maximum power dissipation is rated at 1.6W (Ta) and 45W (Tc), with an operating junction temperature of 150°C. This component is utilized in automotive and industrial power switching applications.
Additional Information
Series: U-MOSV-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3430 pF @ 10 V |
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