TPCA8A01-H(TE12L,Q
MOSFET N-CH 30V 36A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCA8A01-H-TE12L-Q is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) capability of 36 A at 25°C (Ta). The low on-resistance of 5.6 mOhm is achieved at 18 A and 10 V Vgs, with a drive voltage range from 4.5 V to 10 V. Power dissipation is rated at 1.6 W (Ta) and 45 W (Tc). The device utilizes Metal Oxide technology and is housed in an 8-SOP Advance (5x5) package, suitable for surface mounting. Key electrical parameters include a maximum gate charge (Qg) of 35 nC at 10 V and an input capacitance (Ciss) of 1970 pF at 10 V. The maximum operating junction temperature is 150°C, with a gate-source voltage limit of ±20V. This MOSFET is commonly employed in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1970 pF @ 10 V |
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