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TPCA8128,LQ(CM

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TPCA8128,LQ(CM

MOSFET P-CH 30V 34A 8SOP

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage TPCA8128-LQ-CM is a P-channel MOSFET from the U-MOSVI series. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 34A at 25°C (Ta). The Rds On is specified as a maximum of 4.8mOhm at 17A and 10V Vgs. It offers a gate charge (Qg) of 115 nC maximum at 10V Vgs and an input capacitance (Ciss) of 4800 pF maximum at 10V Vds. The power dissipation is rated at 1.6W (Ta) and 45W (Tc). This component utilizes Metal Oxide technology and is housed in an 8-SOP Advance (5x5) package, suitable for surface mounting. The operating temperature range is up to 150°C (TJ). Applications include power management in automotive and industrial systems.

Additional Information

Series: U-MOSVIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C34A (Ta)
Rds On (Max) @ Id, Vgs4.8mOhm @ 17A, 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id2V @ 500µA
Supplier Device Package8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)+20V, -25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4800 pF @ 10 V

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