TPCA8120,LQ(CM
MOSFET P-CH 30V 45A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCA8120-LQ-CM is a P-Channel MOSFET from the U-MOSVI series. This 30V device features a continuous drain current capability of 45A at 25°C (Ta) and a low on-resistance of 3mOhm at 22.5A, 10V. The TPCA8120-LQ-CM is housed in an 8-SOP Advance (5x5) package, suitable for surface mount applications and supplied on tape and reel. It offers a maximum power dissipation of 1.6W (Ta) and 45W (Tc). Key parameters include a gate charge of 190 nC at 10V and input capacitance of 7420 pF at 10V. This component is utilized in power management applications across various industries.
Additional Information
Series: U-MOSVIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7420 pF @ 10 V |