TPCA8105(TE12L,Q,M
MOSFET P-CH 12V 6A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCA81105-TE12L-Q-M is a P-Channel MOSFET designed for efficient power switching. This component features a Drain-to-Source Voltage (Vdss) of 12V and a continuous drain current (Id) @ 25°C of 6A (Ta), with a maximum power dissipation of 1.6W (Ta) and 20W (Tc). The Rds On (Max) is 33mOhm @ 3A, 4.5V, achievable with gate drive voltages ranging from 1.8V to 4.5V.
The TPCA81105-TE12L-Q-M is housed in an 8-SOP Advance (5x5) package, suitable for surface mount applications. Key electrical characteristics include a maximum gate charge (Qg) of 18 nC @ 5V and input capacitance (Ciss) of 1600 pF @ 10V. The device operates within an ambient temperature range up to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±8V. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics power management circuits. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 10 V |
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