TPCA8103(TE12L,Q,M
MOSFET P-CH 30V 40A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCA8103-TE12L-Q-M is a P-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage and supports a continuous drain current of 40A at 25°C (Ta). The low on-resistance of 4.2mOhm at 20A and 10V gate-source voltage (Vgs) minimizes conduction losses. With a maximum power dissipation of 1.6W (Ta) and 45W (Tc), it is suitable for thermal management in compact designs. The TPCA8103-TE12L-Q-M utilizes an 8-SOP Advance (5x5) package, facilitating efficient heat transfer via surface mounting. Key electrical characteristics include a gate charge (Qg) of 184 nC (max) at 10V Vgs and input capacitance (Ciss) of 7880 pF (max) at 10V Vds. This component is commonly employed in power management, automotive electronics, and industrial control systems. It operates within a junction temperature range of -55°C to 150°C and has a maximum gate-source voltage of ±20V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 184 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7880 pF @ 10 V |
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