TPCA8102(TE12L,Q,M
MOSFET P-CH 30V 40A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPCA8102-TE12L-Q-M is a P-Channel MOSFET designed for high-current applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 40A at 25°C. The TPCA8102-TE12L-Q-M offers a low on-resistance (Rds On) of 6mOhm at 20A and 10V Vgs. Power dissipation is rated at 1.6W (Ta) and 45W (Tc). Key electrical characteristics include a gate charge (Qg) of 109 nC at 10V and input capacitance (Ciss) of 4600 pF at 10V. The MOSFET operates with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 2V at 1mA. It is housed in an 8-SOP Advance (5x5) package, suitable for surface mounting, and supplied on tape and reel. This component is utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 109 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 10 V |
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