TPCA8065-H,LQ(S
MOSFET N-CH 30V 16A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCA8065-H-LQ-S is an N-Channel MOSFET from the U-MOSVII-H series. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C (Ta). It offers a low on-resistance of 11.4mOhm maximum at 8A and 10V (Vgs). The TPCA8065-H-LQ-S is housed in an 8-SOP Advance (5x5) package, suitable for surface mount applications. With a maximum junction temperature of 150°C, it supports power dissipation of 1.6W (Ta) and 25W (Tc). Key parameters include a gate charge (Qg) of 20 nC max at 10V (Vgs) and input capacitance (Ciss) of 1600 pF max at 10V (Vds). This component finds application in power management, automotive, and industrial control systems.
Additional Information
Series: U-MOSVII-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 11.4mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 200µA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 10 V |