TPCA8064-H,LQ(CM
MOSFET N-CH 30V 20A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage's TPCA8064-H-LQ-CM is an N-Channel MOSFET from the U-MOSVII-H series. This component features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 20 A at 25°C (Ta). The device exhibits a maximum on-resistance (Rds On) of 8.2 mOhm at 10 A and 10 V gate-source voltage (Vgs). It is designed for surface mount applications with a compact 8-SOP Advance (5x5) package, supplied on tape and reel. The maximum operating junction temperature is 150°C. Key electrical characteristics include a gate charge (Qg) of 23 nC (max) at 10 V Vgs and an input capacitance (Ciss) of 1900 pF (max) at 10 V Vds. Power dissipation is rated at 1.6 W (Ta) and 32 W (Tc). This MOSFET is suitable for use in power management and switching applications across various industrial sectors.
Additional Information
Series: U-MOSVII-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 32W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 200µA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 10 V |