TPCA8062-H,LQ(CM
MOSFET N-CH 30V 28A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCA8062-H-LQ-CM is an N-Channel MOSFET from the U-MOSVII-H series. This device features a 30V drain-source voltage and a continuous drain current of 28A at 25°C ambient. The low on-resistance is specified as a maximum of 5.6mOhm at 14A and 10V gate-source voltage. The TPCA8062-H-LQ-CM is housed in an 8-PowerVDFN package, also referred to as 8-SOP Advance (5x5), and is supplied on tape and reel. Key electrical parameters include a maximum gate charge of 34nC at 10V and maximum input capacitance of 2900pF at 10V. Power dissipation is rated at 1.6W ambient and 42W at case temperature, with an operating junction temperature up to 150°C. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: U-MOSVII-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 300µA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 10 V |