TPCA8057-H,LQ(M
MOSFET N-CH 30V 42A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage's TPCA8057-H-LQ-M is an N-Channel MOSFET from the U-MOSVII-H series. This component features a 30V drain-source voltage and a continuous drain current of 42A at 25°C (Ta). With a low on-resistance of 2.6mOhm at 21A and 10V Vgs, it offers efficient power handling. The device boasts a maximum gate charge of 61 nC at 10V and an input capacitance of 5200 pF at 10V. Designed for surface mounting, it comes in an 8-SOP Advance (5x5) package. Power dissipation is rated at 1.6W (Ta) and 57W (Tc), with an operating junction temperature of 150°C. This MOSFET is suitable for applications requiring high current switching and low conduction losses, including power management and automotive systems.
Additional Information
Series: U-MOSVII-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 57W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 500µA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 10 V |