TPCA8056-H,LQ(M
MOSFET N-CH 30V 48A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCA8056-H-LQ-M is an N-Channel MOSFET from the U-MOSVII-H series, designed for demanding power applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 48A at 25°C (Ta). With a low on-resistance (Rds On) of 2.2mOhm at 24A and 10V Vgs, it minimizes conduction losses. The MOSFET supports gate drive voltages from 4.5V to 10V, with a maximum gate charge (Qg) of 74 nC and input capacitance (Ciss) of 6200 pF at 10V Vds.
The TPCA8056-H-LQ-M offers robust thermal performance, with a maximum power dissipation of 1.6W (Ta) and 63W (Tc). It operates reliably at junction temperatures up to 150°C. The component is housed in an 8-SOP Advance (5x5) package suitable for surface mounting and is supplied on tape and reel. This MOSFET is utilized in industries such as automotive, industrial power supplies, and consumer electronics where efficient power switching is critical.
Additional Information
Series: U-MOSVII-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 63W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6200 pF @ 10 V |