TPCA8055-H,LQ(M
MOSFET N-CH 30V 56A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage's TPCA8055-H-LQ-M is an N-Channel MOSFET from the U-MOSVII-H series. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 56A at 25°C (Ta). The device offers a low on-resistance (Rds On) of 1.9mOhm at 28A and 10V gate-source voltage. It operates with drive voltages ranging from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. Key electrical characteristics include a maximum gate charge (Qg) of 91 nC at 10V and a maximum input capacitance (Ciss) of 7700 pF at 10V. The TPCA8055-H-LQ-M supports a maximum junction temperature of 150°C. Power dissipation is rated at 1.6W (Ta) and 70W (Tc). This device utilizes a surface mount 8-SOP Advance (5x5) package, supplied on tape and reel. It finds application in power management circuits across various industries.
Additional Information
Series: U-MOSVII-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 70W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7700 pF @ 10 V |