TPCA8052-H(T2L1,VM
MOSFET N-CH 40V 20A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPCA8052-H-T2L1-VM is a N-Channel MOSFET from the U-MOSVI-H series. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 20A at 25°C ambient. The TPCA8052-H-T2L1-VM is designed for surface mounting in an 8-SOP Advance (5x5) package, delivered on tape and reel. Key electrical characteristics include a maximum on-resistance of 11.3mOhm at 10A and 10V Vgs, and a gate charge of 25 nC maximum. Input capacitance (Ciss) is specified at 2110 pF maximum. Power dissipation is rated at 1.6W (ambient) and 30W (case). This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: U-MOSVI-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 11.3mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 200µA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2110 pF @ 10 V |
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