TPCA8051-H(T2L1,VM
MOSFET N-CH 80V 28A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCA8051-H-T2L1-VM is an N-Channel MOSFET from the U-MOSVI-H series. This device features a drain-source voltage of 80V and a continuous drain current of 28A at 25°C (Ta). The on-resistance (Rds On) is a maximum of 9.4mOhm at 14A and 10V. It is packaged in an 8-SOP Advance (5x5) format, suitable for surface mounting and supplied on tape and reel. The device offers a maximum power dissipation of 1.6W (Ta) or 45W (Tc). Key parameters include a gate charge (Qg) of 91nC at 10V and input capacitance (Ciss) of 7540pF at 10V. This component finds application in power management solutions for automotive and industrial equipment.
Additional Information
Series: U-MOSVI-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7540 pF @ 10 V |
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