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TPCA8045-H(T2L1,VM

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TPCA8045-H(T2L1,VM

MOSFET N-CH 40V 46A 8SOP

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage's TPCA8045-H-T2L1-VM is an N-Channel MOSFET from the U-MOSVI-H series. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 46A at 25°C. The low on-resistance (Rds On) is 3.6mOhm at 23A and 10V Vgs. It offers a maximum power dissipation of 1.6W (Ta) and 45W (Tc). The TPCA8045-H-T2L1-VM utilizes a Surface Mount 8-SOP Advance (5x5) package, supplied in Tape & Reel (TR). Key parameters include a gate charge (Qg) of 90 nC at 10V and input capacitance (Ciss) of 7540 pF at 10V. This component is suitable for applications requiring efficient power switching in automotive and industrial sectors.

Additional Information

Series: U-MOSVI-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C46A (Ta)
Rds On (Max) @ Id, Vgs3.6mOhm @ 23A, 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id2.3V @ 1mA
Supplier Device Package8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7540 pF @ 10 V

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