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TPCA8036-H(TE12L,Q

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TPCA8036-H(TE12L,Q

MOSFET N-CH 30V 38A 8SOP

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage TPCA8036-H-TE12L-Q is an N-Channel MOSFET from the U-MOSVI-H series. This component features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) rating of 38A at 25°C (Ta). The Rds On is specified at a maximum of 4.2 mOhm at 19A and 10V Vgs. It offers a maximum gate charge (Qg) of 50 nC at 10 V and an input capacitance (Ciss) of 4600 pF at 10 V. Power dissipation capabilities include 1.6W (Ta) and 45W (Tc). The device is housed in an 8-PowerVDFN package, also referred to as an 8-SOP Advance (5x5), and is supplied on tape and reel. The maximum operating junction temperature is 150°C, with a maximum gate-source voltage (Vgs) of ±20V. This MOSFET is suitable for applications in automotive and industrial power management.

Additional Information

Series: U-MOSVI-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38A (Ta)
Rds On (Max) @ Id, Vgs4.2mOhm @ 19A, 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id2.3V @ 500µA
Supplier Device Package8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4600 pF @ 10 V

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