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TPCA8031-H(TE12L,Q

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TPCA8031-H(TE12L,Q

MOSFET N-CH 30V 24A 8SOP

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage TPCA8031-H-TE12L-Q is an N-Channel MOSFET from the U-MOSV-H series. This device features a 30 V drain-source voltage (Vdss) and a continuous drain current of 24 A (Ta) at 25°C. The Rds On is specified at a maximum of 11 mOhm at 12 A and 10 V gate-source voltage. Designed for efficient power management, it offers a maximum power dissipation of 1.6 W (Ta) and 30 W (Tc). Gate drive is supported from 4.5 V to 10 V, with a maximum gate-source voltage of ±20 V. Key parameters include a gate charge (Qg) of 21 nC (max) at 10 V and input capacitance (Ciss) of 2150 pF (max) at 10 V. The device is housed in an 8-SOP Advance (5x5) package, suitable for surface mounting. This component finds application in power supply units and automotive systems.

Additional Information

Series: U-MOSV-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Ta)
Rds On (Max) @ Id, Vgs11mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device Package8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2150 pF @ 10 V

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