TPCA8028-H(TE12LQM
MOSFET N-CH 30V 50A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPCA8028-H-TE12LQM is an N-Channel MOSFET from the U-MOSIV-H series. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C ambient. The TPCA8028-H-TE12LQM offers a low on-resistance of 2.8mOhm maximum at 25A and 10V gate-source voltage. It is supplied in an 8-SOP Advance (5x5) package for surface mounting, with a maximum junction temperature of 150°C. Power dissipation is rated at 1.6W (Ta) and 45W (Tc). Key parameters include a gate charge (Qg) of 88 nC maximum at 10V and input capacitance (Ciss) of 7800 pF maximum at 10V. This component is suitable for applications in automotive and industrial power switching.
Additional Information
Series: U-MOSIV-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF @ 10 V |
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