TPCA8026(TE12L,Q,M
MOSFET N-CH 30V 45A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel MOSFET, part number TPCA8026-TE12L-Q-M, from the U-MOSIV series. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 45A at 25°C (Ta). It offers a low on-resistance (Rds On) of 2.2mOhm maximum at 23A and 10V Vgs. The MOSFET is housed in an 8-SOP Advance (5x5) package, suitable for surface mounting and supplied on tape and reel. Key parameters include a gate charge (Qg) of 113 nC maximum at 10V Vgs and input capacitance (Ciss) of 4200 pF maximum at 10V Vds. Maximum power dissipation is rated at 1.6W (Ta) and 45W (Tc), with an operating junction temperature of 150°C. This component is utilized in applications requiring efficient power switching and management, including automotive and industrial power systems.
Additional Information
Series: U-MOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 10 V |
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