TPCA8023-H(TE12LQM
MOSFET N-CH 30V 21A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage's TPCA8023-H-TE12LQM is an N-Channel MOSFET designed for high-efficiency power conversion applications. This component features a 30V drain-source voltage (Vdss) and offers a continuous drain current (Id) of 21A at 25°C. The device exhibits a low on-resistance (Rds On) of 12.9mOhm at 11A and 10V gate-source voltage (Vgs). With a maximum junction temperature of 150°C, it supports significant power dissipation, rated at 1.6W (Ta) and 30W (Tc). The 8-SOP Advance (5x5) package is suitable for surface mount configurations, and it is supplied in tape and reel packaging. Typical applications include power management in computing, industrial, and automotive sectors. Key electrical parameters include a gate charge (Qg) of 21 nC at 10V and input capacitance (Ciss) of 2150 pF at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA, with a maximum gate-source voltage (Vgs) tolerance of ±20V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
| Rds On (Max) @ Id, Vgs | 12.9mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 10 V |
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