TPCA8021-H(TE12LQM
MOSFET N-CH 30V 27A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCA8021-H-TE12LQM is an N-Channel MOSFET designed for robust power management applications. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 27A at 25°C, with a maximum power dissipation of 1.6W (Ta) and 45W (Tc). Its low on-resistance (Rds On) of 9mOhm is achieved at 14A drain current and 10V gate-source voltage, with a typical gate charge (Qg) of 23nC at 10V. The input capacitance (Ciss) is rated at 1395pF maximum at 10V. Operating at junction temperatures up to 150°C, this MOSFET utilizes Metal Oxide technology and is housed in a compact 8-PowerVDFN package, supplied on tape and reel. The TPCA8021-H-TE12LQM is suitable for use in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1395 pF @ 10 V |
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