TPCA8018-H(TE12LQM
MOSFET N-CH 30V 30A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCA8018-H-TE12LQM is an N-Channel MOSFET designed for high-efficiency power switching applications. This component boasts a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 30 A at 25°C (Ta). The low on-resistance, specified as a maximum of 6.2 mOhm at 15 A and 10 V Vgs, coupled with a gate charge (Qg) of 34 nC (Max) at 10 V, ensures minimal power loss during switching transitions.
The TPCA8018-H-TE12LQM features a maximum power dissipation of 1.6 W (Ta) and 45 W (Tc) and operates at an ambient temperature up to 150°C (TJ). Its input capacitance (Ciss) is a maximum of 2846 pF at 10 V Vds. Packaged in an 8-SOP Advance (5x5) format for surface mounting, this MOSFET is delivered on tape and reel. It is suitable for use in automotive and industrial power management systems. The maximum gate-source voltage (Vgs) is ±20V, and the threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2846 pF @ 10 V |
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