TPCA8016-H(TE12LQM
MOSFET N-CH 60V 25A 8-SOPAManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage's TPCA8016-H-TE12LQM is a N-Channel MOSFET designed for high-efficiency power management applications. This component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 25A at 25°C ambient temperature. The device exhibits a low on-resistance (Rds On) of 21mOhm maximum at 13A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 22 nC maximum at 10V Vgs and an input capacitance (Ciss) of 1375 pF maximum at 10V Vds.
The TPCA8016-H-TE12LQM is housed in an 8-SOP Advance (5x5) package, suitable for surface mounting, and is supplied in Digi-Reel® packaging. Its technology is based on Metal Oxide MOSFET principles. This component is commonly utilized in automotive systems, power supplies, and general industrial control circuits where robust power switching is required.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Digi-Reel®Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 13A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1375 pF @ 10 V |
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