TPCA8012-H(TE12LQM
MOSFET N-CH 30V 40A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPCA8012-H-TE12LQM is an N-Channel MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 40A at 25°C ambient temperature. The device exhibits a low on-resistance of 4.9mOhm at 20A and 10V gate-source voltage. It is housed in an 8-SOP Advance (5x5) package, suitable for surface mounting and offering efficient thermal dissipation up to 150°C junction temperature. Key electrical parameters include a gate charge (Qg) of 42 nC at 10V and input capacitance (Ciss) of 3713 pF at 10V. The TPCA8012-H-TE12LQM is utilized in power management, automotive, and industrial systems requiring robust power switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3713 pF @ 10 V |
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