TPCA8011-H(TE12LQM
MOSFET N-CH 20V 40A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPCA8011-H-TE12LQM is an N-Channel MOSFET from the U-MOSIII-H series. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 40A at 25°C ambient. It offers a low on-resistance of 3.5mOhm maximum at 20A drain current and 4.5V gate-source voltage. The MOSFET supports gate drive voltages from 2.5V to 4.5V, with a maximum gate-source voltage of ±12V. Key parameters include a maximum gate charge of 32 nC at 5V Vgs and a maximum input capacitance of 2900 pF at 10V Vds. Power dissipation is rated at 1.6W ambient and 45W case temperature. The component is housed in an 8-SOP Advance (5x5) package, supplied on tape and reel. This MOSFET is suitable for applications in power management and high-current switching circuits across various industrial sectors.
Additional Information
Series: U-MOSIII-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 20A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 1.3V @ 200µA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 10 V |
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